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NDD04N50Z
N-Channel Power MOSFET
500 V, 2.7 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
V DSS
500 V
http://onsemi.com
R DS(on) (MAX) @ 1.5 A
2.7 W
Rating
Drain ? to ? Source Voltage
Continuous Drain Current R q JC
Continuous Drain Current
R q JC , T A = 100 ° C
Pulsed Drain Current, V GS @ 10 V
Power Dissipation R q JC
Gate ? to ? Source Voltage
Single Pulse Avalanche Energy,
I D = 3.4 A
ESD (HBM) (JESD22 ? A114)
Peak Diode Recovery
Symbol
V DSS
I D
I D
I DM
P D
V GS
E AS
V esd
dv/dt
Value
500
3.0
1.9
12
61
± 30
120
2800
4.5 (Note 1)
Unit
V
A
A
A
W
V
mJ
V
V/ns
G (1)
N ? Channel
D (2)
4
S (3)
4
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads
I S
T L
3.4
260
A
° C
1
2
3
1 2
3
Operating Junction and T J , T stg ? 55 to 150 ° C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I D v 3.4 A, di/dt ≤ 200 A/ m s, V DD ≤ BV DSS , T J ≤ 150 ° C.
IPAK DPAK
CASE 369D CASE 369AA
STYLE 2 STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
September, 2011 ? Rev. 1
1
Publication Order Number:
NDD04N50Z/D
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